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| Ordering number:ENN6117 NPN Epitaxial Planar Silicon Composite Transistor FH201 VCO OSC Circuit Applications Features * Composite type with a buffer transistor (2SC4871) and a oscillator transistor (2SC4867) contained in the currently provided MCP package as a VCO oscillator, improving the mounting efficiency greatly. * The FH201 is formed with two chips, being equivalent to the 2SC4871 and 2SC4867, placed in one package. * Optimal for use in UHF band oscillator circuit. Package Dimensions unit:mm 2149 [FH201] 0.425 0.15 6 5 4 1.25 2.1 0 to 0.1 0.2 0.425 12 0.65 2.0 3 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Tr1 [2SC4871] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Tr2 [2SC4867] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation [Common specifications] Total Dissipation Junction Temperature Storage Temperature PT Tj Tstg VCBO VCEO VEBO IC PC VCBO VCEO VEBO IC PC Symbol Conditions 0.9 Ratings 16 8 1.5 20 150 16 8 1.5 50 150 200 150 -55 to +150 0.2 0.25 1 : Collector1 2 : Emitter1 3 : Collector2 4 : Emitter2 5 : Base2 6 : Base1 SANYO : MCP6 Unit V V V mA mW V V V mA mW mW C C Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N0199TS (KOTO) TA-1315 No.6117-1/8 FH201 Electrical Characteristics at Ta = 25C Parameter Tr1 [2SC4871] Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Forward Transfer Gain Noise Figure Tr2 [2SC4867] Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Forward Transfer Gain Noise Figure ICBO IEBO hFE fT Cob | S21e |2 NF VCB=10V, IE=0 VEB=1V, IC=0 VCE=5V, IC=15mA VCE=5V, IC=15mA VCB=10V, f=1MHz VCE=5V, IC=15mA, f=1GHz VCE=5V, IC=5mA, f=1GHz 10 90 9.0 0.6 13 1.2 2.5 1.1 1.0 10 180 GHz pF dB dB A A ICBO IEBO hFE fT Cob | S21e |2 NF VCB=10V, IE=0 VEB=1V, IC=0 VCE=5V, IC=4mA VCE=5V, IC=4mA VCB=10V, f=1MHz VCE=5V, IC=7mA, f=1GHz VCE=5V, IC=4mA, f=1GHz 10 90 10 0.4 13 1.3 2.8 0.7 1.0 10 180 GHz pF dB dB A A Symbol Conditions Ratings min typ max Unit Marking : 201 Electrical Connection B1 B2 E2 Tr1 Tr2 C1 E1 C2 3 2 hFE -- IC [Tr1] VCE=5V Gain-Bandwidth Produnt, fT - GHz 2 fT -- IC [Tr1] VCE=5V 10 7 5 3 2 DC Current Gain, hFE 100 7 5 3 2 1.0 7 5 3 10 7 5 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 3 5 7 1.0 2 3 5 7 Collector Current, IC - mA 5 3 IT00335 Collector Current, IC - mA 10 2 3 IT00336 Cob -- VCB [Tr1] f=1MHz Reverse Transfer Capacitance, Cre - pF 5 3 2 Cre -- VCB [Tr1] f=1MHz Output Capacitance, Cob - pF 2 1.0 7 5 3 2 1.0 7 5 3 2 0.1 7 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 0.1 7 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 Collector-to-Base Voltage, VCB -- V IT00337 Collector-to-Base Voltage, VCB -- V IT00338 No.6117-2/8 FH201 NF -- IC [Tr1] Forward Transfer Gain, S21e - dB VCE=5V f=1GHz 10 16 14 12 10 8 6 4 2 0 S21e2 -- IC [Tr1] VCE=5V f=1GHz 8 Noise Figure, NF - dB 6 4 2 0 5 7 1.0 2 3 5 7 Collector Current, IC - mA 10 2 3 2 2 3 5 7 1.0 2 3 5 7 10 2 3 5 IT00339 Collector Current, IC - mA IT00340 220 200 PC -- Ta [Tr1] Collector Dissipation, PC - mW 180 160 150 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 To t al di 1u ss ip nit ati on Ambient Temperature, Ta - C IT00341 No.6117-3/8 FH201 S parameter [Tr1] VCE=5V f=200MHz to 2000MHz(200MHz Step) S11e j50 j25 j100 j150 j10 j200 j250 VCE=5V f=200MHz to 2000MHz(200MHz Step) S21e 90 V 120 C IC E =5V =7 mA z GH 0.2150 V =5 EA V C =2m IC 2.0 GH Hz z .2G 0 2 180 2.0 GH z 60 30 0 10 25 50 100 150 250 4 6 8 10 0 --j10 V C IC= E=5V GHz 7mA 0.2 VCE =5V IC =2mA 0.2 GH z 2.0 GH z z GH 2.0 --j250 --j200 --j150 --150 --30 --j25 --j50 --j100 --120 IT00342 --60 --90 IT00343 VCE=5V f=200MHz to 2000MHz(200MHz Step) S12e 90 120 V C IC E =5V =7 mA 60 VCE=5V f=200MHz to 2000MHz(200MHz Step) S22e j50 j25 30 j10 j100 j150 j200 j250 150 --j10 --150 --30 --j250 V --j200 Hz V CE=5 2.0G A I C=2m --j150 --j25 --j50 --j100 --120 --60 --90 IT00344 2.0 GH VCE=5V IC=7mA IT00345 0.2 0.2 GH GH z z 180 GH z 0.2 GH z V =5 V CE 2mA I C= 0.2 GH z 2. 0G H z 2.0 0.04 0.08 0.12 0.16 0.2 0 0 10 25 50 100 150 250 z No.6117-4/8 FH201 S Parameters (Common emitter) [Tr1] VCE=5V, IC=2mA, ZO=50 Freq (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 | S11 | 0.912 0.835 0.742 0.649 0.578 0.512 0.445 0.400 0.359 0.319 S11 -17.6 -33.0 -46.9 -58.9 -68.7 -78.1 -86.3 -93.0 -98.5 -106.6 | S21 | 5.764 5.282 4.753 4.268 3.840 3.440 3.123 2.836 2.588 2.297 S21 161.5 145.5 131.2 119.4 109.4 100.5 92.5 85.2 79.0 73.0 | S12 | 0.034 0.065 0.088 0.107 0.121 0.134 0.145 0.154 0.164 0.174 S12 79.0 69.9 62.8 57.9 54.5 52.2 50.3 49.2 48.4 47.9 | S22 | 0.974 0.919 0.850 0.789 0.740 0.698 0.664 0.638 0.615 0.601 S22 -10.3 -19.2 -26.3 -31.6 -35.5 -38.9 -41.6 -44.3 -46.3 -48.3 VCE=5V, IC=7mA, ZO=50 Freq (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 | S11 | 0.721 0.555 0.428 0.344 0.291 0.254 0.221 0.197 0.178 0.171 S11 -35.1 -59.9 -77.5 -89.9 -100.6 -110.9 -121.4 -128.9 -136.7 -148.6 | S21 | 12.262 9.445 7.290 5.877 4.911 4.223 3.703 3.294 2.946 2.692 S21 147.1 124.9 110.2 100.1 92.1 85.1 79.0 73.6 68.5 63.8 | S12 | 0.030 0.050 0.065 0.078 0.091 0.104 0.117 0.129 0.143 0.157 S12 72.8 64.4 61.9 61.5 61.7 61.5 61.6 61.6 61.1 60.7 | S22 | 0.900 0.763 0.666 0.611 0.583 0.563 0.551 0.540 0.530 0.529 S22 -16.9 -25.6 -29.3 -31.1 -32.5 -34.1 -35.7 -37.8 -39.7 -41.7 No.6117-5/8 FH201 3 2 hFE -- IC [Tr2] VCE=5V Gain-Bandwidth Product, fT - GHz 2 fT -- IC [Tr2] VCE=5V 10 7 5 3 2 DC Current Gain, hFE 100 7 5 3 2 1.0 7 5 3 10 7 5 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 IT00346 5 7 1.0 2 3 5 7 10 2 3 5 Collector Current, IC - mA 5 3 Collector Current, IC - mA 5 7 100 IT00347 Cob -- VCB [Tr2] Reverse Transfer Capacitance, Cre - pF f=1MHz Cre -- VCB [Tr2] f=1MHz 3 2 Output Capacitance, Cob - pF 2 1.0 7 5 3 2 1.0 7 5 3 2 0.1 7 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 0.1 7 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 Collector-to-Base Voltage, VCB -- V 10 IT00348 Collector-to-Base Voltage, VCB -- V NF -- IC [Tr2] Forward Transfer Gain, S21e - dB VCE=5V f=1GHz 16 14 12 10 8 6 4 2 0 S21e2 -- IC IT00349 [Tr2] VCE=5V f=1GHz 8 Noise Figure, NF - dB 6 4 2 0 7 1.0 2 3 5 7 10 2 3 5 7 2 3 5 7 1.0 2 3 5 7 10 2 3 5 Collector Current, IC - mA 220 200 IT00350 Collector Current, IC - mA 7 100 IT00351 PC -- Ta [Tr2] Collector Dissipation, PC - mW 180 160 150 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 To tal di ss ip ati 1u on nit Ambient Temperature, Ta - C IT00352 No.6117-6/8 FH201 S parameter [Tr2] VCE=5V f=200MHz to 2000MHz(200MHz Step) S11e j50 j25 j100 j150 j10 25 VCE=5V f=200MHz to 2000MHz(200MHz Step) S21e 90 120 IC =1 5m A 0.2GHz I C=5m A 60 0.2G Hz j200 j250 =1 2.0GHz I C 150 30 z 2.0GH G 2.0 2.0GHz 0 10 50 100 150 250 180 Hz 4 8 12 16 20 0 A 5m =5 IC --j10 0.2G Hz H 0.2G z --j250 --j200 --j150 A m --150 --30 --j25 --j50 --j100 --120 IT00353 --60 --90 IT00354 VCE=5V f=200MHz to 2000MHz(200MHz Step) S12e 90 120 0.2 G 0.2 Hz IC = 15m GH A z 2.0 IC GH =5 z mA 2.0 GH z 60 VCE=5V f=200MHz to 2000MHz(200MHz Step) S22e j50 j25 30 j10 j100 j150 j200 j250 150 180 0.04 0.08 0.12 0.16 0.2 0 0 10 25 50 100 150 250 --j10 --150 --30 5m A Hz .0G Hz 2 G IC=5mA 2.0 IC =1 --j250 --j200 --j150 --120 --60 --90 IT00355 --j25 --j50 --j100 IT00356 No.6117-7/8 FH201 S Parameters (Common emitter) [Tr2] VCE=5V, IC=5mA, ZO=50 Freq (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 | S11 | 0.749 0.583 0.487 0.428 0.405 0.387 0.377 0.365 0.362 0.361 S11 -50.7 -85.7 -109.6 -126.6 -139.3 -150.6 -160.1 -166.8 -174.3 178.3 | S21 | 12.229 8.900 6.636 5.276 4.379 3.731 3.258 2.924 2.589 2.363 S21 141.6 118.1 103.7 93.9 85.9 78.7 72.6 67.5 61.9 56.8 | S12 | 0.044 0.068 0.081 0.093 0.106 0.117 0.130 0.142 0.156 0.171 S12 65.4 54.3 51.6 51.6 52.6 53.6 54.4 55.2 55.6 55.9 | S22 | 0.847 0.655 0.538 0.473 0.443 0.421 0.405 0.393 0.387 0.383 S22 -25.4 -37.4 -42.3 -44.4 -46.2 -48.1 -49.6 -52.1 -54.3 -56.4 VCE=5V, IC=7mA, ZO=50 Freq (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 | S11 | 0.507 0.382 0.341 0.332 0.320 0.316 0.315 0.314 0.311 0.313 S11 -81.6 -119.5 -140.9 -154.0 -163.0 -170.9 -178.0 176.7 171.2 165.4 | S21 | 19.422 11.595 8.046 6.182 5.063 4.263 3.716 3.270 2.922 2.656 S21 124.2 103.8 93.3 86.4 79.8 74.1 69.2 64.3 60.0 55.9 | S12 | 0.033 0.050 0.065 0.081 0.099 0.116 0.134 0.150 0.167 0.186 S12 61.9 61.0 63.3 65.1 65.6 65.7 65.0 64.4 63.3 62.1 | S22 | 0.650 0.445 0.365 0.330 0.318 0.311 0.304 0.297 0.293 0.295 S22 -36.9 -43.0 -43.5 -43.3 -43.8 -45.9 -47.4 -50.3 -52.6 -54.8 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 1999. Specifications and information herein are subject to change without notice. PS No.6117-8/8 |
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